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APTGT75TA120P
Triple phase leg Trench IGBT(R) Power Module
VBUS1 VBUS2 VBUS3
VCES = 1200V IC = 75A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control
G1
G3
G5
E1
U
E3
V
E5
W
G2
G4
G6
E2 0/VBUS1
E4 0/VBUS2
E6 0/VBUS3
Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration Benefits * Stable temperature behavior * Very rugged * Solderable terminals for easy PCB mounting * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Very low (12mm) profile * Each leg can be easily paralleled to achieve a phase leg of three times the current capability * Module can be configured as a three phase bridge * Module can be configured as a boost followed by a full bridge Max ratings 1200 100 75 175 20 350 150A@1150V Unit V A V W
September, 2004 1-5 APTGT75TA120P - Rev 0
VBUS 1
VBUS 2
VBUS 3
G1 0/VBUS 1 E1 E2 G2 0/VBUS 2
G3 E3 E4 G4 0/VBUS 3
G5 E5 E6 G6
U
V
W
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C
Reverse Bias Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
APTGT75TA120P
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVCES ICES VCE(on) VGE(th) IGES Test Conditions Min Collector - Emitter Breakdown Voltage Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current VGE = 0V, IC = 5mA VGE = 0V, VCE = 1200V Tj = 25C VGE =15V IC = 75A Tj = 125C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V
1200
Typ
Max 5 2.1 6.5 500
Unit V mA V V nA
1.4 5.0
1.7 2.0
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 75A R G = 4.7 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 75A R G = 4.7
Min
Typ 5340 280 240 260 30 420 70 285 50 520 90 7 8.1
Max
Unit pF
ns
ns
mJ
Eon includes diode reverse recovery In accordance with JEDEC standard JESD24-1
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM VF Er Qrr Maximum Reverse Leakage Current Diode Forward Voltage Reverse Recovery Energy Reverse Recovery Charge
Test Conditions VR=1200V IF = 75A VGE = 0V IF = 75A VR = 600V di/dt =825A/s IF = 75A VR = 600V di/dt =825A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Min 1200
Typ
Max 250 500 2.1
Unit V A V mJ C
September, 2004 2-5 APTGT75TA120P - Rev 0
1.6 1.6 3 6 7.6 13.7
APT website - http://www.advancedpower.com
APTGT75TA120P
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 3 Min Typ Max 0.35 0.58 150 125 100 5 250 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M6
Package outline
5 places (3:1)
APT website - http://www.advancedpower.com
3-5
APTGT75TA120P - Rev 0
September, 2004
APTGT75TA120P
Typical Performance Curve
150 125
IC (A) Output Characteristics (VGE=15V) Output Characteristics 150 TJ = 125C
T J=25C
125
TJ=125C
VGE =17V
V GE=13V VGE =15V V GE=9V
100
IC (A)
100 75 50 25 0
75 50 25 0 0 1 2 VCE (V) 3 4
0
1
2 V CE (V)
3
4
150 125 100 IC (A) 75 50 25 0 5
Transfert Characteristics 17.5
T J=25C T J=125C
Energy losses vs Collector Current 15 12.5 E (mJ) 10 7.5 5 2.5 0 0 25 50 75 IC (A) Reverse Safe Operating Area 175 150
Eoff Er VCE = 600V VGE = 15V RG = 4.7 TJ = 125C Eoff Eon
6
7
8 9 VGE (V)
10
11
12
100
125
150
Switching Energy Losses vs Gate Resistance 16 14 12 E (mJ) 10 8 6 4 2 0 0 4 8 12 16 20 24 Gate Resistance (ohms) 28 32
Er VCE = 600V VGE =15V IC = 75A TJ = 125C Eon
125 IC (A) 100 75 50 25 0 0 400 800 V CE (V) 1200 1600
V GE=15V T J=125C RG=4.7
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.4 Thermal Impedance (C/W) 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0.00001 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.7 0.5 0.3 IGBT
rectangular Pulse Duration (Seconds)
APT website - http://www.advancedpower.com
4-5
APTGT75TA120P - Rev 0
September, 2004
0.9
APTGT75TA120P
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 60 50 40 30 20 10 0 0 20 40 60 IC (A) 80 100 120
Hard switching ZVS ZCS VCE=600V D=50% RG=4.7 TJ=125C
Forward Characteristic of diode 150 125 100 IC (A) 75 50 25 0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4
TJ=125C TJ=25C
Tc=75C
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.6 Thermal Impedance (C/W) 0.9 0.5 0.4 0.3 0.2 0.1 0.7 0.5 0.3 0.1 0.05 0.0001
Diode
Single Pulse 0.001 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
5-5
APTGT75TA120P - Rev 0
September, 2004

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